| PART |
Description |
Maker |
| LE25FV101T |
1M (128k words × 8bits) Serial Flash EEPROM
1M (128k words 】 8bits) Serial Flash EEPROM
|
Sanyo Semicon Device
|
| D2364 UPD2364 UPD2364-30PC UPD2364-35PC UPD2364-45 |
Search -> UPD2364
ROM 8192 words / 8-Bit
READ ONLY MEMORY 8192 WORDS, 8BITS/WORD
|
NEC Electronics
NEC Corp.
|
| HY62KF0840 |
High speed, super low power and 4M bit full CMOS SRAM organized as 512K words by 8bits
|
HYNIX
|
| LC36128ML-85 LC36128ML-70 LC36128ML-10 |
128K(16384 words X 8 bits) SRAM
|
http://
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| LC361000AMLL LC361000ARLL-10 LC361000ARLL-70 LC361 |
1 MEG (131072 words X 8 bits) SRAM 1迈可31072字8位）的SRAM
128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
| BA8291 |
8bits Serial-In Parallel-Out Driver
|
Rohm
|
| MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万（256K × 8/128K × 16）位快闪记忆体（V的电源电56K × 8/128K × 16闪速存储器
2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
|
Fujitsu, Ltd.
Fujitsu Limited
|
| HY57V28820HCLT-8I HY57V28820HCLT-HI HY57V28820HCLT |
4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 128Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| AT27C010-15DI AT27C010-45TIT/R AT27C010-90KM AT27C |
128K X 8 UVPROM, 150 ns, CDIP32
128K X 8 OTPROM, 45 ns, PDSO32
128K X 8 UVPROM, 90 ns, CQCC32
128K X 8 UVPROM, 55 ns, CDIP32
|
ATMEL CORP
|
